Thin Film Passivation Characteristics in OLED Using In-situ Passivation

Ex situ hydrogen passivation effect of visible p-i-n type thin-film light-emitting diode characteristics

The effect of ex situ hydrogen passivation process on the performance of visible hydrogenated amorphous silicon carbide ~a-SiC:H!-based p-i-n type thin-film light-emitting diodes has been investigated. An ex situ hydrogen passivation process dramatically improved the device performance; that is, the threshold voltage decreased by about 5 V, the electroluminescence ~EL! intensity increased by a ...

Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

Surface passivation optimization using DIRECT

We describe a systematic and efficient method of determining pseudo-atom positions and potentials for use in nanostructure calculations based on bulk empirical pseudopotentials (EPMs). Given a bulk EPM for binary semiconductor X, we produce parameters for pseudo-atoms necessary to passivate a nanostructure of X in preparation for quantum mechanical electronic structure calculations. These passi...

Thin film encapsulation for flexible AM-OLED

Flexible organic light emitting diode (OLED) will be the ultimate display technology to customers and industries in the near future but the challenges are still being unveiled one by one. Thin-film encapsulation (TFE) technology is the most demanding requirement to prevent water and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance ...

Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors